
P381 – 6″ HV/UHV multitechnique deposition cluster tool MPIE
Application
HV/UHV multitechnique deposition cluster tool for thin film and multilayer deposition at 6″ substrates
Year of delivery
2014
Installation site
MPIE, Düsseldorf, Germany
Design Features
- HV/UHV multitechnique deposition cluster tool with combination of confocal sputtering, E-Beam evaporation, thermal evaporation and different type of effusion cells.
- The standard sample size and shape is 6″ wafer.
- HV deposition chamber with two E-Beam evaporation sources, two 2″ magnetrons, one thermal evaporation source and one low temperature effusion cell installed.
- Deposition uniformity better than 5% for all depostition sources.
- All confocal 2″ magnetrons with pneumatic in situ tilting.
- One E-Beam source as rotary multipocket e-beam with motorized pocket exchange
- Fully motorized 2 axes sample manipulator with integrated sample shutter and maximal sample temperature well above 600°C.
- UHV deposition chamber with one E-Beam evaporation source and three high temperature effusion cell installed.
- Deposition uniformity better than 10% for all depostition sources.
- One E-Beam source as linear multipocket e-beam with motorized pocket exchange
- Fully motorized 2 axes sample manipulator with integrated sample shutter and maximal sample temperature well above 750°C.
- Preparation chamber with ion source option and docking port for sample tranportation container.
- Load lock chamber with storage for 5 samples, installed lamp heating option and connection port to a laminar flow box.
- Automatic sample transfer between all chambers via a radial distribution chamber.
- Integrated bake out system.
Special Features
- Different sample sizes and shapes can be handled (using different kind of sample holders).
Outer Dimensions
Technical specifications and performance values
General
HV deposition chamber
Size
About 760 mm width, about 800 mm depth, about 860 mm height (D-shape chamber with door)
Material
stainless steel
UHV deposition chamber
Size
About 400 mm diameter, about 950 mm height
Material
stainless steel
Load lock chamber
Size
About 300 mm diameter, about 400 mm height
Material
stainless steel
Preparation chamber
Size
About 200 mm diameter, about 850 mm height
Material
stainless steel
Radial distribution chamber
Size
About 1100 mm diameter, about 450 mm height
Material
stainless steel
Vacuum
HV deposition chamber
Base pressure
< 6 * 10-8 mbar
Pump down time
3 hours to < 10-7 mbar
Chamber pumping
Turbo pumping stage, chamber door differentially pumped by dry foreline pump
Bake out
< 120°C
UHV deposition chamber
Base pressure
< 5 * 10-10 mbar
Pump down time
1.5 hours to < 10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Bake out
< 150°C
Load lock chamber
Base pressure
< 10-7 mbar
Pump down time
1 hour to < 10-6 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Preparation chamber
Base pressure
< 8 * 10-8 mbar
Pump down time
not specified
Chamber pumping
Turbo pumping stage with dry foreline pump (via radial distribution chamber)
Radial distribution chamber
Base pressure
< 9 * 10-8 mbar
Pump down time
4.5 hours to < 2 * 10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Manipulator features
HV deposition chamber
Sample size
diameter max. 6″ substrate
Motion axes
2 motorized axes (manipulator z tranlsation and (continous) rotation of the sample stage)
Pneumatic sample shutter (part of the manipulator head)
Temperatures
Room temperature (not stabilized) up to 650°C at sample
UHV deposition chamber
Sample size
diameter max. 6″ substrate
Motion axes
2 motorized axes (manipulator z tranlsation and (continous) rotation of the sample stage)
Pneumatic sample shutter (part of the manipulator head)
Temperatures
Room temperature (not stabilized) up to 850°C at sample
Sample preparation features
Load lock chamber
Thermal treatment
max. 200°C at sample (no temperature regulation)
Preparation chamber
Oxydation / Nitration /
Plasma treatment
max. 5 * 10-4 mbar partly ionised gas mixture (using a griddless ion gun)
Gas mixture variable from pure argon up to pure oxygen or nitrogen
Ion beam etching /
sample precleaning
Variable ion source to sample distance
Wide range variable ion energy and ion beam current