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P363 – 3″ UHV sputter deposition MEET


UHV sputter deposition system for thin film and multilayer deposition at 3″ substrates

Year of delivery


Installation site

MEET, Münster, Germany

Design Features

  • UHV magnetron sputter deposition system with combination of confocal and face to face sputter up configurations.
  • Up to seven 2″ magnetrons in confocal configuration and up to three 4″ magnetrons in face to face configuration.
    • 2″ magnetrons with manual in situ tilting.
    • 4″ magnetrons with manual z translation stage.
  • Fully motorized 3 axes sample manipulator with integrated motorized wedge shutter, DC Bias potential option and maximal sample temperature well above 800°C.
  • Ion source for sample precleaning and mild etching.
  • Integrated bake out system.
  • Load lock chamber with lamp heating option.

Special Features

  • Upto five 2″ magnetrons can be used in face to face configuration too.
  • E-Beam source introduction possible.
  • System is prepared for ion beam assisted deposition as well.
  • Different sample sizes from 3″ wafer down to 10mm x 10mm samples can be handled (without the need of a sample adapter).

Outer Dimensions

Technical specifications and performance values


Sputtering chamber


1000 mm diameter, about 800 mm height


stainless steel

Load lock chamber


150 mm diameter, about 250 mm height


stainless steel


Sputtering chamber

Base pressure

< 5 *10-8 mbar

Pump down time

2 hours to < 2*10-6 mbar

Chamber pumping

Turbo pumping stage, chamber lid differentially pumped by dry foreline pump

Bake out

< 150°C

Load lock chamber

Base pressure

< 10-7 mbar

Pump down time

2 hours to < 10-6 mbar

Chamber pumping

Turbo pumping stage with dry foreline pump

Manipulator features

Sputtering chamber

Sample size

diameter max. 3″ substrate

Motion axes

3 motorized axes (manipulator arm rotation, z tranlsation and (continous) sample stage rotation)

Motorized wedge shutter (part of the manipulator head) with speed profile feature


Room temperature (not stabilized) up to > 850°C at sample

Special features

DC Sample bias is possible

Sample preparation features

Sputtering chamber

Plasma treatment

max. 10-3 mbar partly ionised gas mixture (using a griddless ion gun)

Gas mixture variable from pure argon up to pure oxygen

Ion beam etching /

sample precleaning

Wide range variation of ion source to sample distance

Wide range variation of ion energy and ion beam current

Load lock chamber

Thermal treatment

max. 350°C at sample (no temperature regulation)

Performance test results

Chamber pump down (LL chamber)
Long time sample heating (LL chamber)
Chamber pump down (SP chamber)
Long time sample heating (SP chamber)